Surface phonon polariton characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure.
Identifieur interne : 001721 ( Main/Exploration ); précédent : 001720; suivant : 001722Surface phonon polariton characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure.
Auteurs : RBID : pubmed:20588890English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Aluminum, Indium.
- analysis : Manufactured Materials.
- methods : Surface Plasmon Resonance.
- Computer Simulation, Materials Testing, Models, Chemical, Photons.
Abstract
Surface phonon polariton (SPP) characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure are investigated by means of p-polarized infrared (IR) attenuated total reflection spectroscopy. Two absorption dips corresponding to In(0.04)Al(0.06)Ga(0.90)N SPP modes are observed. In addition, two prominent dips and one relatively weak and broad dip corresponding to the Al(2)O(3) SPP mode, In(0.04)Al(0.06)Ga(0.90)N/Al(2)O(3) interface mode, and Al(2)O(3) bulk polariton mode, respectively, are clearly seen. No surface mode feature originating from the AlN layer is observed because it is too thin. Overall, the observations are in good agreement with the theoretical predictions.
PubMed: 20588890
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Surface phonon polariton characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure.</title><author><name sortKey="Ng, S S" uniqKey="Ng S">S S Ng</name><affiliation wicri:level="1"><nlm:affiliation>Nano-Optoelectronic Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia. shashiong@yahoo.com</nlm:affiliation><country xml:lang="fr">Malaisie</country><wicri:regionArea>Nano-Optoelectronic Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang</wicri:regionArea></affiliation></author><author><name sortKey="Lee, S C" uniqKey="Lee S">S C Lee</name></author><author><name sortKey="Bakhori, S K Mohd" uniqKey="Bakhori S">S K Mohd Bakhori</name></author><author><name sortKey="Hassan, Z" uniqKey="Hassan Z">Z Hassan</name></author><author><name sortKey="Abu Hassan, H" uniqKey="Abu Hassan H">H Abu Hassan</name></author><author><name sortKey="Yakovlev, V A" uniqKey="Yakovlev V">V A Yakovlev</name></author><author><name sortKey="Novikova, N N" uniqKey="Novikova N">N N Novikova</name></author><author><name sortKey="Vinogradov, E A" uniqKey="Vinogradov E">E A Vinogradov</name></author></titleStmt><publicationStmt><date when="2010">2010</date><idno type="RBID">pubmed:20588890</idno><idno type="pmid">20588890</idno><idno type="wicri:Area/Main/Corpus">001874</idno><idno type="wicri:Area/Main/Curation">001874</idno><idno type="wicri:Area/Main/Exploration">001721</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminum (chemistry)</term><term>Computer Simulation</term><term>Indium (chemistry)</term><term>Manufactured Materials (analysis)</term><term>Materials Testing</term><term>Models, Chemical</term><term>Photons</term><term>Surface Plasmon Resonance (methods)</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Aluminum</term><term>Indium</term></keywords><keywords scheme="MESH" qualifier="analysis" xml:lang="en"><term>Manufactured Materials</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Surface Plasmon Resonance</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term><term>Materials Testing</term><term>Models, Chemical</term><term>Photons</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Surface phonon polariton (SPP) characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure are investigated by means of p-polarized infrared (IR) attenuated total reflection spectroscopy. Two absorption dips corresponding to In(0.04)Al(0.06)Ga(0.90)N SPP modes are observed. In addition, two prominent dips and one relatively weak and broad dip corresponding to the Al(2)O(3) SPP mode, In(0.04)Al(0.06)Ga(0.90)N/Al(2)O(3) interface mode, and Al(2)O(3) bulk polariton mode, respectively, are clearly seen. No surface mode feature originating from the AlN layer is observed because it is too thin. Overall, the observations are in good agreement with the theoretical predictions.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">20588890</PMID><DateCreated><Year>2010</Year><Month>06</Month><Day>30</Day></DateCreated><DateCompleted><Year>2010</Year><Month>11</Month><Day>22</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>18</Volume><Issue>10</Issue><PubDate><Year>2010</Year><Month>May</Month><Day>10</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Surface phonon polariton characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure.</ArticleTitle><Pagination><MedlinePgn>10354-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.18.010354</ELocationID><Abstract><AbstractText>Surface phonon polariton (SPP) characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure are investigated by means of p-polarized infrared (IR) attenuated total reflection spectroscopy. Two absorption dips corresponding to In(0.04)Al(0.06)Ga(0.90)N SPP modes are observed. In addition, two prominent dips and one relatively weak and broad dip corresponding to the Al(2)O(3) SPP mode, In(0.04)Al(0.06)Ga(0.90)N/Al(2)O(3) interface mode, and Al(2)O(3) bulk polariton mode, respectively, are clearly seen. No surface mode feature originating from the AlN layer is observed because it is too thin. Overall, the observations are in good agreement with the theoretical predictions.</AbstractText><CopyrightInformation>(c) 2010 Optical Society of America.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Ng</LastName><ForeName>S S</ForeName><Initials>SS</Initials><Affiliation>Nano-Optoelectronic Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia. shashiong@yahoo.com</Affiliation></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>S C</ForeName><Initials>SC</Initials></Author><Author ValidYN="Y"><LastName>Bakhori</LastName><ForeName>S K Mohd</ForeName><Initials>SK</Initials></Author><Author ValidYN="Y"><LastName>Hassan</LastName><ForeName>Z</ForeName><Initials>Z</Initials></Author><Author ValidYN="Y"><LastName>Abu Hassan</LastName><ForeName>H</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Yakovlev</LastName><ForeName>V A</ForeName><Initials>VA</Initials></Author><Author ValidYN="Y"><LastName>Novikova</LastName><ForeName>N N</ForeName><Initials>NN</Initials></Author><Author ValidYN="Y"><LastName>Vinogradov</LastName><ForeName>E A</ForeName><Initials>EA</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>CPD4NFA903</RegistryNumber><NameOfSubstance>Aluminum</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Aluminum</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Computer Simulation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Manufactured Materials</DescriptorName><QualifierName MajorTopicYN="N">analysis</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Models, Chemical</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Photons</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Plasmon Resonance</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2010</Year><Month>7</Month><Day>1</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2010</Year><Month>7</Month><Day>1</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2010</Year><Month>12</Month><Day>14</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">199307</ArticleId><ArticleId IdType="pubmed">20588890</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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